Session – Electronic Devices
Novel concepts

Programme

• 10:30 – 11:00 25 Min. 5 Min.

  • Invited Talk
  • IT 57

  Advanced device concepts for power electronics (Trenched power devices, Diamond Growth in GaN trenches, Vertical Transistors)

  • Professor Elison Matioli (École Polytechnique Fédérale de Lausanne / CH)
• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 212

  Sub-micron thick step-graded AlGaN buffer on silicon with a buffer breakdown field higher than 6 MV/cm

  • Elodie Carneiro (Institute of Electronics, Microelectronics and Nanotechnology (IEMN), CNRS / FR)

   Characterization, Electronic devices
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 213

  Fabrication of low on-resistance and normally-off AlGaN/GaN MOS-HFETs with AlGaN back-barrier by selective-area re-growth technique

  • Dr. Jumpei Tajima (Toshiba Corporation / JP)

   Electronic devices, Growth
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 214

  Influence of space-charge region on luminescence in a lateral GaN superjunction

  • Dr. Gordon Schmidt (Otto-von-Guericke-University Magdeburg / DE)

   Characterization, Electronic devices
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 216

  Threshold control in ultrawide bandgap Al_0.4Ga_0.6N-channel MOSHFETs using high temperature post ALD annealing

  • Prof. Dr. Asif Khan (University of South Carolina / US)

   Characterization, Electronic devices