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Abstract Talk
AT 213

Fabrication of low on-resistance and normally-off AlGaN/GaN MOS-HFETs with AlGaN back-barrier by selective-area re-growth technique

Appointment

Date: 13/10/2022

Time: 11:15 – 11:30

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Rome

Session

Novel concepts

Topics

Electronic devices
Growth

Authors

Dr. Jumpei Tajima (Toshiba Corporation / JP), Dr. Toshiki Hikosaka (Toshiba Corporation / JP), Dr. Shinya Nunoue (Toshiba Corporation / JP)