Please enable Javascript to use all features and improve your user experience.
IWN 2022
Programme
People
Search
DE
All people
Dr. Jumpei Tajima
Toshiba Corporation / JP
Toshiba Corporation
Sort by Type
Date
Speaker
13/10/2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 213
Fabrication of low on-resistance and normally-off AlGaN/GaN MOS-HFETs with AlGaN back-barrier by selective-area re-growth technique
Electronic devices, Growth
Further involvements
13/10/2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 213
Fabrication of low on-resistance and normally-off AlGaN/GaN MOS-HFETs with AlGaN back-barrier by selective-area re-growth technique
Electronic devices, Growth
© Conventus Congressmanagement & Marketing GmbH
Imprint
Privacy