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Dr. Jumpei Tajima

Toshiba Corporation / JP

Toshiba Corporation

Vortrag

13.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 213
Fabrication of low on-resistance and normally-off AlGaN/GaN MOS-HFETs with AlGaN back-barrier by selective-area re-growth technique
Electronic devices, Growth

Weitere Beteiligungen

13.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 213
Fabrication of low on-resistance and normally-off AlGaN/GaN MOS-HFETs with AlGaN back-barrier by selective-area re-growth technique
Electronic devices, Growth