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  • Abstract Talk
  • AT 212

Sub-micron thick step-graded AlGaN buffer on silicon with a buffer breakdown field higher than 6 MV/cm

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Rome

Session

Novel concepts

Topics

  • Characterization
  • Electronic devices

Authors

Elodie Carneiro (IEMN (Institute of Electronics, Microelectronics and Nanotechnology) / FR)

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