Poster Session 2
Electronic devices

Programm

• • Poster Presentation
  • PP 131

  High-performance E-Mode p-Channel GaN FinFETs on silicon substrate

  • Dr. Hanghai Du (Xidian University / CN)

   Electronic devices
• • Poster Presentation
  • PP 132

  Technological challenges in the development of a normally-off monolithically integrated bidirectional GaN-based switch

  • Jasmin Ehrler (RWTH Aachen / DE)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 133

  High-breakdown-voltage (> 3000 V) and low-power-dissipation Al_0.3Ga_0.7N/GaN/Al_0.1Ga_0.9N double-heterostructure HEMTs with ohmic / Schottky hybrid drains and Al₂O₃/SiO₂ passivation

  • Dr. Yutong Fan (Xidian University / CN)

   Electronic devices
• • Poster Presentation
  • PP 134

  Sputtering epitaxial preparation of AlN/Al_0.5Ga_0.5N HEMTs with heavily Si-doped degenerate GaN contacts

  • Professor Hiroshi Fujioka (The University of Tokyo / JP)

   Electronic devices, Growth
• • Poster Presentation
  • PP 135

  On the formation mechanism of Au-free ohmic contacts for AlGaN/GaN-HEMTs

  • Valentin Garbe (TU Bergakademie Freiberg / DE)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 137

  Improvement of the thermal performance of the GaN-on-Si RF transistors by introducing a GNOI structure

  • Dr. Lu Hao (Xidian university / CN)

   Electronic devices
• • Poster Presentation
  • PP 138

  UWBG Al0.45Ga0.55N channel heterostructure field effect transistors with AlGaN back-barrier

  • Kamal Hussain (University of South Carolina / US)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 139

  Progress in novel co-doping moieties to achieve enhanced P-type doping in GaN by ion implantation

  • Dr. Alan Jacobs (US Naval Research Laboratory / US)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 140

  Flexible AlGaN/GaN HEMTs on PET with Gauge Factor 1800

  • Prof. Dr. Asif Khan (University of South Carolina / US)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 141

  Low damage etching of nitride semiconductors

  • Christian Miersch (Fraunhofer Institute of Integrated Systems and Devices / DE)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 142

  InGaN-Based resonant cavity Light-Emitting Diodes in red spectral region

  • Dr. Wei Ou (School of Electronic Science and Engineering / CN)

   Electronic devices, Optical devices
• • Poster Presentation
  • PP 143

  Effect of GaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates

  • Dr. Marko Tadjer (Naval Research Laboratory / US)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 146

  High breakdown voltage (>2700V) AlGaN-Channel HEMTs with high stability

  • Yu Wen (Xidian University / CN)

   Electronic devices, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 147

  Strained channel AlN/GaN heterostructures homoepitaxially grown on AlN-on-sapphire template by plasma-assisted molecular beam epitaxy

  • Dr. Jiajia Yao (Xidian University / CN)

   Electronic devices, Growth
• • Poster Presentation
  • PP 148

  Enhancement-mode (11-22) semi-polar GaN lateral MOSFETs using crystallographic wet etching technique

  • Yidi Yin (The University of Sheffield / GB)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 149

  Crystal-plane dependent influence of TMAH on trench etching for GaN Schottky and p-n diodes

  • Thorsten Zweipfennig (RWTH Aachen University / DE)

   Electronic devices, Growth
• • Poster Presentation
  • PP 149a

  Depletion- and enhancement-mode p-Channel MISHFET based on p-GaN/GaN/AlGaN heterostructures

  • Professor Andrei Vescan (RWTH Aachen University / DE)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 150

  Cu/Pd₂Si Schottky contacts to AlGaN/GaN-on-Si HEMT heterostructures

  • Dr. Marek Wzorek (Łukasiewicz Research Network / PL)

   Characterization, Electronic devices