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Poster Presentation
PP 134

Sputtering epitaxial preparation of AlN/Al_0.5Ga_0.5N HEMTs with heavily Si-doped degenerate GaN contacts

Termin

Datum: 11.10.2022

Zeit: 13:15 – 13:15

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Themen

Electronic devices
Growth

Mitwirkende

Professor Ryota Maeda (The University of Tokyo / JP), Dr. Kohei Ueno (The University of Tokyo / JP), Professor Atsushi Kobayashi (The University of Tokyo / JP), Professor Hiroshi Fujioka (The University of Tokyo / JP)