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Poster Presentation
PP 134

Sputtering epitaxial preparation of AlN/Al_0.5Ga_0.5N HEMTs with heavily Si-doped degenerate GaN contacts

Appointment

Date: 11/10/2022

Time: 13:15 – 13:15

Talk time: 0 Min.

Discussion time: 0 Min.

Location / Stream:

Topic Electronic devices

Session

Electronic devices

Topics

Electronic devices
Growth

Authors

Professor Ryota Maeda (The University of Tokyo / JP), Dr. Kohei Ueno (The University of Tokyo / JP), Professor Atsushi Kobayashi (The University of Tokyo / JP), Professor Hiroshi Fujioka (The University of Tokyo / JP)