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Poster Presentation
PP 133

High-breakdown-voltage (> 3000 V) and low-power-dissipation Al_0.3Ga_0.7N/GaN/Al_0.1Ga_0.9N double-heterostructure HEMTs with ohmic / Schottky hybrid drains and Al₂O₃/SiO₂ passivation

Termin

Datum: 11.10.2022

Zeit: 13:15 – 13:15

Redezeit: 0 Min.

Diskussionszeit: 0 Min.

Ort / Stream:

Topic Electronic devices

Session

Electronic devices

Thema

Electronic devices

Mitwirkende

Professor Weihang Zhang (Xidian University / CN), Dr. Yutong Fan (Xidian University / CN), Prof. Dr. Jincheng Zhang (Xidian University / CN)

High-breakdown-voltage (> 3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with ohmic / Schottky hybrid drains and Al2O3/SiO2 passivation

Termin

Session

Thema

Mitwirkende

High-breakdown-voltage (> 3000 V) and low-power-dissipation Al_0.3Ga_0.7N/GaN/Al_0.1Ga_0.9N double-heterostructure HEMTs with ohmic / Schottky hybrid drains and Al₂O₃/SiO₂ passivation