.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Professor Andrei Vescan

RWTH Aachen University / DE

RWTH Aachen University

Vorsitz

12.10.2022
14:15 – 15:45
Session
Surface and interface states
Salon Rome

Vortrag

11.10.2022
Poster Presentation
PP 149a
Depletion- and enhancement-mode p-Channel MISHFET based on p-GaN/GaN/AlGaN heterostructures
Characterization, Electronic devices

Weitere Beteiligungen

10.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 072
A resonant electro-optic UV-Vis modulator based on an AlGaN/GaN heterostructure
Novel Materials and Nanostructures, Optical devices
11.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 063
Fabrication of GaN micropillars with low net doping concentration by selective-area growth
Growth, Novel Materials and Nanostructures
11.10.2022
Poster Presentation
PP 149a
Depletion- and enhancement-mode p-Channel MISHFET based on p-GaN/GaN/AlGaN heterostructures
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 132
Technological challenges in the development of a normally-off monolithically integrated bidirectional GaN-based switch
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 149
Crystal-plane dependent influence of TMAH on trench etching for GaN Schottky and p-n diodes
Electronic devices, Growth
12.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 115
Charge-trapping flash memory based on AlGaN/GaN/AlGaN double heterostructures
Electronic devices, Novel Materials and Nanostructures
12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices