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IWN 2022
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Session
Session – Electronic Devices
Surface and interface states
Termin
Datum:
12.10.2022
Zeit:
14:15
–
15:45
Ort / Stream:
Salon Rome
Chair
Professor Kei May Lau
Hong Kong University of Science and Technology / HK
Professor Andrei Vescan
RWTH Aachen University / DE
Programm
14:15
–
14:45
25 Min.
5 Min.
Invited Talk
IT 39
Use of HfZrO ferroelectric thin film as gate stack material to achieve High Vth E-Mode GaN HEMT for power application
Hans-Joachim Würfl (Ferdinand-Braun-Institut / DE)
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
PP 034
Threshold voltage instability under positive bias stress in vertical GaN trench MOSFETs
Mitsuki Inagaki (Nagoya University / JP)
Characterization, Electronic devices
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 158
Control of oxidation and reduction reactions at SiO
2
/GaN interfaces towards high performance and reliability GaN MOSFETs
Takuma Kobayashi (Osaka University / JP)
Characterization, Electronic devices
15:15
–
15:30
12 Min.
3 Min.
Abstract Talk
AT 159
P-channel and N-channel metal insulator semiconductor field effect transistors on p-GaN/i-GaN/i-AlGaN/i-GaN hetero-structure
Yidi Yin (The University of Sheffield / GB)
Characterization, Electronic devices
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 160
Co-integrated E-mode and D-mode Al(Ga)N/GaN HEMTs via p-GaN sublimation and local area regrowth of AlGaN
Dr. Yvon Cordier (CRHEA-CNRS / FR)
Electronic devices, Growth
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