.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Dr. Patrick Waltereit

Fraunhofer IAF / DE

Fraunhofer IAF

Vorsitz

11.10.2022
15:30 – 16:30
Session
High frequency II
Salon Rome

Invited Speaker

14.10.2022
10:30 – 11:00 25 Min. 5 Min.
Invited Talk
IT 65
GaN on-chip Integration: Technology & Applications

Vortrag

10.10.2022
Poster Presentation
PP 046
Comparative study of quarter-micron AlGaN/GaN HEMTs grown on QST-engineered, SiC and Si substrates
Electronic devices, Growth

Weitere Beteiligungen

10.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 031
Evaluation of GaN-based CAVETs fabricated by non-planar selective area regrowth or ion implantation
Electronic devices, Growth
10.10.2022
Poster Presentation
PP 046
Comparative study of quarter-micron AlGaN/GaN HEMTs grown on QST-engineered, SiC and Si substrates
Electronic devices, Growth
11.10.2022
Poster Presentation
PP 143
Effect of GaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates
Characterization, Electronic devices
12.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 131
MOCVD growth and simulation of AlScN high-electron-mobility-transistor-structures
Characterization, Novel Materials and Nanostructures