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IWN 2022
Programm
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Session
Session – Electronic Devices
High frequency II
Termin
Datum:
11.10.2022
Zeit:
15:30
–
16:30
Ort / Stream:
Salon Rome
Chair
Dr. Patrick Waltereit
Fraunhofer IAF / DE
Programm
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 085
Analysis of mechanical strain in AlGaN/GaN HFETs
Hossein Yazdani (Ferdinand-Braun-Institute / DE)
Characterization, Electronic devices
15:45
–
16:00
12 Min.
3 Min.
Abstract Talk
AT 086
High-frequency characterization of ferroelectric gate stacks on GaN-based HEMTs for RF switch applications
Professor Patrick Fay (University of Notre Dame / US)
Electronic devices, Novel Materials and Nanostructures
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 088
Enhancement-mode AlN/GaN HEMTs on Si for RF applications
Dr. Hanlin Xie (Institute of Microelectronics, A*STAR / SG)
Electronic devices, Novel Materials and Nanostructures
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