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IWN 2022
Programm
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Session
Session – Growth
GaN Crystallization and Defects
Termin
Datum:
12.10.2022
Zeit:
10:30
–
12:00
Ort / Stream:
Salon Moskau
Chair
Dr. Tania Paskova
North Carolina State University / US
Programm
10:30
–
11:00
25 Min.
5 Min.
Invited Talk
IT 37
What has recently been discovered and what we still need to find out about crystallization of truly bulk GaN
Professor Michał Bockowski (Polish Academy of Science / PL)
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 143
Melting vs decomposition of GaN – Ab initio molecular dynamics study
Professor Izabella Grzegory (Polish Academy of Sciences / PL)
Characterization, Growth
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 144
Insights into the formation of nanopipes and V-pits in and on GaN from first principles
Prof. Dr. Liverios Lymperakis (Max-Planck-Institut für Eisenforschung GmbH / DE)
Electronic devices, Growth
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 145
Non-destructive characterization of dislocations observed in HVPE GaN grown on Na-flux-grown GaN substrate
Bhavpreeta Pratap Charan (Osaka University / JP)
Characterization, Growth
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 146
Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography
Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics / DE)
Characterization, Growth
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