Session – Growth
GaN Crystallization and Defects

Programme

• 10:30 – 11:00 25 Min. 5 Min.

  • Invited Talk
  • IT 37

  What has recently been discovered and what we still need to find out about crystallization of truly bulk GaN

  • Professor Michał Bockowski (Polish Academy of Science / PL)
• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 143

  Melting vs decomposition of GaN – Ab initio molecular dynamics study

  • Professor Izabella Grzegory (Polish Academy of Sciences / PL)

   Characterization, Growth
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 144

  Insights into the formation of nanopipes and V-pits in and on GaN from first principles

  • Prof. Dr. Liverios Lymperakis (Max-Planck-Institut für Eisenforschung GmbH / DE)

   Electronic devices, Growth
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 145

  Non-destructive characterization of dislocations observed in HVPE GaN grown on Na-flux-grown GaN substrate

  • Bhavpreeta Pratap Charan (Osaka University / JP)

   Characterization, Growth
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 146

  Structural analysis of low defect ammonothermally grown GaN wafers by Borrmann effect X-ray topography

  • Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics / DE)

   Characterization, Growth