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IWN 2022
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Prof. Dr. Masahiro Horita
Nagoya University / JP
Nagoya University
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Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 033
Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN
Characterization, Electronic devices
11.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 048
Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
Characterization, Electronic devices
12.10.2022
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 173
Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN
Characterization, Electronic devices
12.10.2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 174
Correlation between non-ionizing energy loss and production rates of an electron trap at
E
C
– (0.12-0.20) eV formed by various energetic particles in gallium nitride
Characterization, Electronic devices
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 235
Temperature dependence of impact ionization coefficients in GaN
Characterization, Electronic devices
14.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 237
Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap
Characterization, Electronic devices
14.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 246
Percentage of C
N
acceptors to residual carbon atoms in n-type GaN homoepitaxial layers
Characterization, Electronic devices
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