Dr. Grzegorz Staszczak

Weitere Beteiligungen

• 10.10.2022

  16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 021

  Quantum confined Stark Effect screening efficiency induced by the optical excitation in symmetric double InGaN/GaN quantum wells – role of barrier width and temperature

   Characterization, Optical devices
• 10.10.2022

  • Poster Presentation
  • PP 075

  Ultra-high-pressure doping of gallium nitride with europium

   Growth, Novel Materials and Nanostructures
• 11.10.2022

  • Poster Presentation
  • PP 164

  Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells

   Growth, Optical devices
• 11.10.2022

  • Poster Presentation
  • PP 199

  Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region

   Novel Materials and Nanostructures, Optical devices
• 12.10.2022

  • Poster Presentation
  • PP 393

  High temperature growth of InGaN in plasma assisted molecular beam epitaxy – a path towards improvement of quantum efficiency

   Growth, Optical devices
• 13.10.2022

  09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 205

  Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures

   Characterization, Growth