Dr. Szymon Grzanka

Polish Academy of Science / PL

Polish Academy of Science

Vortrag

11.10.2022
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Novel Materials and Nanostructures, Optical devices
12.10.2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 178
InGaN laser diodes with ZnO – Al-based contact layers
Novel Materials and Nanostructures, Optical devices

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
10.10.2022
Poster Presentation
PP 015
Interface state effect on the properties of a Pd-based contact on p-GaN
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 114
Passivation of p-GaN surface for ohmic contact formation
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 164
Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11.10.2022
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Novel Materials and Nanostructures, Optical devices
11.10.2022
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Novel Materials and Nanostructures, Optical devices
11.10.2022
Poster Presentation
PP 253
Micro-disc and micro-ribbon shaped InGaN active region fabricated on corrugated substrates
Growth, Optical devices
11.10.2022
Poster Presentation
PP 259
Influence of structural defects in the In_0.3Ga_0.7N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11.10.2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
12.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 162
P-Cladding layer utilizing polarization doping for blue-violet InGaN laser diodes
Characterization, Optical devices
12.10.2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 178
InGaN laser diodes with ZnO – Al-based contact layers
Novel Materials and Nanostructures, Optical devices
13.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 219
Low absorptive nitride waveguides for application in photonic integrated circuits
Characterization, Optical devices