Dr. Szymon Grzanka

Polish Academy of Science / PL

Polish Academy of Science

Speaker

11/10/2022
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Novel Materials and Nanostructures, Optical devices
12/10/2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 178
InGaN laser diodes with ZnO – Al-based contact layers
Novel Materials and Nanostructures, Optical devices

Further involvements

10/10/2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
10/10/2022
Poster Presentation
PP 015
Interface state effect on the properties of a Pd-based contact on p-GaN
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 114
Passivation of p-GaN surface for ohmic contact formation
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 164
Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11/10/2022
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Novel Materials and Nanostructures, Optical devices
11/10/2022
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Novel Materials and Nanostructures, Optical devices
11/10/2022
Poster Presentation
PP 253
Micro-disc and micro-ribbon shaped InGaN active region fabricated on corrugated substrates
Growth, Optical devices
11/10/2022
Poster Presentation
PP 259
Influence of structural defects in the In_0.3Ga_0.7N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11/10/2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
12/10/2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 162
P-Cladding layer utilizing polarization doping for blue-violet InGaN laser diodes
Characterization, Optical devices
12/10/2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 178
InGaN laser diodes with ZnO – Al-based contact layers
Novel Materials and Nanostructures, Optical devices
13/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
13/10/2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 219
Low absorptive nitride waveguides for application in photonic integrated circuits
Characterization, Optical devices