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Influence of structural defects in the In0.3Ga0.7N/GaN QWs on their evolution during p-type layers growth

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Topic Growth

Session

Growth

Topics

  • Growth
  • Optical devices

Authors

Ewa Grzanka (Institute of High Pressure Physics Polish Academy of Sciences / PL), Dr. Aiqin Tian (Chinese Academy of Sciences / CN), Dr. Julita Smalc-Koziorowska (Institute of High Pressure Physics Polish Academy of Sciences / PL), Dr. Szymon Grzanka (Institute of High Pressure Physics Polish Academy of Sciences / PL), Artur Lachowski (Institute of High Pressure Physics Polish Academy of Sciences / PL), Mikołaj Grabowski (Institute of High Pressure Physics Polish Academy of Sciences / PL), Roman Hrytsak (Institute of High Pressure Physics Polish Academy of Sciences / PL), Dr. Robert Czernecki (Institute of High Pressure Physics Polish Academy of Sciences / PL), Jiangping Liu (Chinese Academy of Sciences / CN), Professor Michał Leszczyński (Institute of High Pressure Physics Polish Academy of Sciences / PL)

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