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Artur Lachowski

Polish Academy of Sciences / PL

Polish Academy of Sciences

Speaker

10/10/2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth

Further involvements

10/10/2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
10/10/2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
11/10/2022
Poster Presentation
PP 164
Summary of studies on the effect of H₂ used during the growth of quantum barriers on InGaN quantum wells
Growth, Optical devices
11/10/2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
11/10/2022
Poster Presentation
PP 259
Influence of structural defects in the In_0.3Ga_0.7N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
13/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth