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IWN 2022
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Dr. Julita Smalc-Koziorowska
Polish Academy of Sciences / PL
Polish Academy of Sciences
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Date
Speaker
10/10/2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 019
The mechanism for the emanation of a-type threading dislocations by stacking fault overlaps and steps in III-nitride heterostructures
Characterization, Growth
11/10/2022
Poster Presentation
PP 106
Core configurations and glide motion of Shockley partial dislocations in GaN by aberration-corrected HRTEM
Characterization, Electronic devices
Further involvements
10/10/2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 002
Origin of anisotropy in partially relaxed InGaN layers and the procedure for strain state analysis
Characterization, Growth
10/10/2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 019
The mechanism for the emanation of a-type threading dislocations by stacking fault overlaps and steps in III-nitride heterostructures
Characterization, Growth
10/10/2022
Poster Presentation
PP 055
Structural analysis of the honeycomb defect in ammonothermal GaN crystals
Characterization, Growth
10/10/2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
10/10/2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
11/10/2022
Poster Presentation
PP 114
Passivation of p-GaN surface for ohmic contact formation
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 106
Core configurations and glide motion of Shockley partial dislocations in GaN by aberration-corrected HRTEM
Characterization, Electronic devices
11/10/2022
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Novel Materials and Nanostructures, Optical devices
11/10/2022
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Novel Materials and Nanostructures, Optical devices
11/10/2022
Poster Presentation
PP 259
Influence of structural defects in the In
0.3
Ga
0.7
N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11/10/2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
12/10/2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 178
InGaN laser diodes with ZnO – Al-based contact layers
Novel Materials and Nanostructures, Optical devices
13/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth
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