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Dr. Julita Smalc-Koziorowska

Polish Academy of Sciences / PL

Polish Academy of Sciences

Vortrag

10.10.2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 019
The mechanism for the emanation of a-type threading dislocations by stacking fault overlaps and steps in III-nitride heterostructures
Characterization, Growth
11.10.2022
Poster Presentation
PP 106
Core configurations and glide motion of Shockley partial dislocations in GaN by aberration-corrected HRTEM
Characterization, Electronic devices

Weitere Beteiligungen

10.10.2022
14:15 – 14:30 12 Min. 3 Min.
Abstract Talk
AT 002
Origin of anisotropy in partially relaxed InGaN layers and the procedure for strain state analysis
Characterization, Growth
10.10.2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 019
The mechanism for the emanation of a-type threading dislocations by stacking fault overlaps and steps in III-nitride heterostructures
Characterization, Growth
10.10.2022
Poster Presentation
PP 055
Structural analysis of the honeycomb defect in ammonothermal GaN crystals
Characterization, Growth
10.10.2022
Poster Presentation
PP 014
X-ray diffraction used for monitoring InGaN quantum well homogenization and decomposition
Characterization, Growth
10.10.2022
Poster Presentation
PP 012
Effect of point defects diffusion on the efficiency of InGaN quantum wells
Characterization, Growth
11.10.2022
Poster Presentation
PP 114
Passivation of p-GaN surface for ohmic contact formation
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 106
Core configurations and glide motion of Shockley partial dislocations in GaN by aberration-corrected HRTEM
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 172
Surface functionalization of N-polar bulk n-GaN for ohmic contacts in vertical devices
Novel Materials and Nanostructures, Optical devices
11.10.2022
Poster Presentation
PP 199
Towards superluminescent diodes with wide emission spectrum – application of new concepts of the active region
Novel Materials and Nanostructures, Optical devices
11.10.2022
Poster Presentation
PP 259
Influence of structural defects in the In_0.3Ga_0.7N/GaN QWs on their evolution during p-type layers growth
Growth, Optical devices
11.10.2022
Poster Presentation
PP 218
Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition
Characterization, Growth
12.10.2022
17:30 – 17:45 12 Min. 3 Min.
Abstract Talk
AT 178
InGaN laser diodes with ZnO – Al-based contact layers
Novel Materials and Nanostructures, Optical devices
13.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 205
Effect of point defects below the InGaN/GaN QWs on their structural and optical properties at elevated temperatures
Characterization, Growth