Poster Session 3
Characterization

Programm

• • Poster Presentation
  • PP 209

  Electrical characterization of GaN and Al-doped GaN grown using electrodeposition technique

  • Abdulraoof Ali (University of Pretoria / ZA)

   Characterization, Growth
• • Poster Presentation
  • PP 210

  Temperature-dependent electron effective mass in bulk GaN revealed by terahertz optical Hall effect

  • Dr. Nerijus Armakavicius (Linköping University / SE)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 211

  Impact of drifting space-charge domains on high-field performance of gallium nitride epilayers

  • Dr. Irmantas Kašalynas (Center for Physical Sciences and Technology (FTMC) / LT)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 212

  Wigner-Weyl description of radiative processes in InGaN alloys based on the localization landscape

  • Dr. Jean-Philippe Banon (Ecole Polytechnique / FR)

   Characterization, Optical devices
• • Poster Presentation
  • PP 213

  Electrical behavior of vertical Schottky diode on GaN homoepitaxy

  • Professor Jean-Marie Bluet (INSA-Lyon / FR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 214

  Observation of novel orientations in an AlN thin film grown on m-plane sapphire using electron backscatter diffraction

  • Dr. Jochen Bruckbauer (University of Strathclyde / GB)

   Characterization, Growth
• • Poster Presentation
  • PP 215

  Advances in in-situ metrology of UV-LED structures in MOVPE

  • Iris Claussen (LayTec AG / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 216

  Detailed analysis of in-plane lattice constants and their correlation to luminescence efficiency of GaInN/GaN single quantum wells

  • Rodrigo De Vasconcellos Lourenco (Technische Universität Braunschweig / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 217

  Measurement of the piezo-electric potentials and dopant segregation in AlN/GaN superlattices by off-axis electron holography

  • Lou Denaix (CEA / FR)

   Characterization, Electronic devices
• • Poster Presentation
  • PP 218

  Indium concentration fluctuations in InGaN/GaN quantum wells grown on sapphire template and on GaN bulk substrate and their relationship with QWs decomposition

  • Ewa Grzanka (Polish Academy of Sciences / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 219

  DFT based modeling of point defect diffusion across the In_0.125Ga_0.875N/GaN and In_0.25Ga_0.75N/GaN interfaces

  • Roman Hrytsak (Institute of High Pressure Physics / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 220

  Analysis of phonon transport in InGaN films and through InGaN/GaN heterointerfaces by Raman imaging using a double-laser system

  • Professor Yoshihiro Ishitani (Chiba University / JP)

   Characterization, Optical devices
• • Poster Presentation
  • PP 221

  Observation compositional modulation variation and reduction in rapidly grown AlGaN self-assembled superlattices by transmission electron microscopy

  • Keisuke Motoki (Georgia Institute of Technology / US)

   Characterization, Growth
• • Poster Presentation
  • PP 222

  Carrier dynamics revealing sub-quantum-well effect on efficiency behavior in dislocation-free DUV AlGaN/AlGaN multiple-quantum-wells

  • Professor Iman Roqan (King Abdullah University of Science and Technology / SA)

   Characterization, Optical devices
• • Poster Presentation
  • PP 223

  Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds

  • Mylène Sauty (LPMC, Ecole polytechnique / FR)

   Characterization, Optical devices
• • Poster Presentation
  • PP 224

  Excitation and carrier relaxation in GaInN/GaN quantum wells under strong optical pumping

  • Malte Schrader (Technische Universität Braunschweig / DE)

   Characterization, Optical devices
• • Poster Presentation
  • PP 226

  Carrier dynamics in InGaN/GaN quantum wells – observation of delayed excited-state kinetics using femtosecond absorption spectroscopy

  • Navneet Kumar Thakur (Indian Institute of Technology Bombay / IN)

   Characterization, Optical devices
• • Poster Presentation
  • PP 227

  Step-edges in InGaN/GaN quantum wells – a source of anisotropic carrier diffusion and emission broadening

  • Thomas Weatherley (Ecole Polytechnique Fédérale de Lausanne (EPFL) / CH)

   Characterization, Growth
• • Poster Presentation
  • PP 228

  Evolution of dislocations in AlN bulk crystals of subsequent growth generations by three-dimensional X-Ray topography

  • Dr. Roland Weingärtner (Fraunhofer IISB / DE)

   Characterization, Growth
• • Poster Presentation
  • PP 229

  Identification and quantitative analysis of point defects in semi-insulating GaN:Mg ammonothermal crystals

  • Dr. Marcin Zajac (Polish Academy of Science / PL)

   Characterization, Growth
• • Poster Presentation
  • PP 230

  On the nature of some defects with deep levels in n-type GaN from a study of electric-field enhancement of their electron emission rates

  • Dr. Piotr Kruszewski (Polish Academy of Sciences / PL)

   Characterization, Novel Materials and Nanostructures
• • Poster Presentation
  • PP 231

  Investigation of GaN-based p-n diodes at the nanoscale by scanning probe microscopy

  • Dr. Albert Minj (IMEC / BE)

   Characterization, Electronic devices