Dr. Habib Ahmad

Weitere Beteiligungen

• 11.10.2022

  • Poster Presentation
  • PP 284

  The effect of Be doping concentration on thermal conductivity of p-type AlN thin films

   Characterization, Novel Materials and Nanostructures
• 11.10.2022

  • Poster Presentation
  • PP 271

  Advancements in aluminum indium nitride growth over a wide compositional range – towards long wavelength III-Nitride optoelectronics

   Characterization, Growth
• 12.10.2022

  11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 136

  Quasi-vertical p-i-n diodes achieving high breakdown performance with GaN:Be I-layer and current spreading layer

   Electronic devices, Growth
• 12.10.2022

  • Poster Presentation
  • PP 341

  p-type AlN based heteroepitaxial diodes with Schottky, PIN and junction barrier Schottky character achieving significant breakdown performance

   Electronic devices, Growth
• 12.10.2022

  17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 180

  Realization of AlN homojunction PN diodes

   Electronic devices, Growth
• 14.10.2022

  09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 228

  Observation of interfacial strain relaxation and electron beam damage thresholds in Al_0.3In_0.7N/GaN heterostructures by transmission electron microscope

   Characterization, Growth