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Abstract Talk
AT 097

Growth and characterization of AlN buffer high-electron mobility transistor on SiC substrate

Termin

Datum: 12.10.2022

Zeit: 10:45 – 11:00

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Rome

Session

Substrates, field effects, transport

Themen

Electronic devices
Growth

Mitwirkende

Minho Kim (Tech University of Korea / KR), Dr. Uiho Choi (Tech University of Korea / KR), Keono Kim (Tech University of Korea / KR), Yunseok Heo (Tech University of Korea / KR), Kyeongjae Lee (WAVICE inc. / KR), Sangmin Lee (WAVICE inc. / KR), Professor Okhyun Nam (Tech University of Korea / KR)