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  • Abstract Talk
  • AT 097

Growth and characterization of AlN buffer high-electron mobility transistor on SiC substrate

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Rome

Session

Substrates, field effects, transport

Topics

  • Electronic devices
  • Growth

Authors

Minho Kim (Tech University of Korea / KR), Dr. Uiho Choi (Tech University of Korea / KR), Keono Kim (Tech University of Korea / KR), Yunseok Heo (Tech University of Korea / KR), Kyeongjae Lee (WAVICE inc. / KR), Sangmin Lee (WAVICE inc. / KR), Professor Okhyun Nam (Tech University of Korea / KR)

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