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IWN 2022
Programm
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Session
Session – Novel Materials & Nanostructures
2D and III-Nitride materials
Termin
Datum:
12.10.2022
Zeit:
11:00
–
12:00
Ort / Stream:
Salon London
Chair
Dr. Hilde Hardtdegen
Forschungszentrum Jülich / DE
Prof. Dr. Jeehwan Kim
Massachusetts Institute of Technology / US
Programm
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 131
MOCVD growth and simulation of AlScN high-electron-mobility-transistor-structures
Isabel Streicher (Fraunhofer Institute for Applied Solid State Physics IAF / DE)
Characterization, Novel Materials and Nanostructures
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 132
A substitutional synthesis mechanism for attaining InGaN/GaN quantum wells with sub-nm thickness and high indium content
Professor Philomela Komninou (Aristotle University of Thessaloniki / GR)
Characterization, Novel Materials and Nanostructures
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 133
Epitaxial growth of III-N/NbN/III-N heterostructures on silicon
Antoine Pedeches (CRHEA-CNRS / FR)
Growth, Novel Materials and Nanostructures
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 134
Fabrication of p-Zn
x
Cu
1-
x
I/n-MgSnN
2
heterojunction
Shunichiro Yata (Chubu University / JP)
Characterization, Novel Materials and Nanostructures
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