Session – Novel Materials & Nanostructures
2D and III-Nitride materials

Programme

• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 131

  MOCVD growth and simulation of AlScN high-electron-mobility-transistor-structures

  • Isabel Streicher (Fraunhofer Institute for Applied Solid State Physics IAF / DE)

   Characterization, Novel Materials and Nanostructures
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 132

  A substitutional synthesis mechanism for attaining InGaN/GaN quantum wells with sub-nm thickness and high indium content

  • Professor Philomela Komninou (Aristotle University of Thessaloniki / GR)

   Characterization, Novel Materials and Nanostructures
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 133

  Epitaxial growth of III-N/NbN/III-N heterostructures on silicon

  • Antoine Pedeches (CRHEA-CNRS / FR)

   Growth, Novel Materials and Nanostructures
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 134

  Fabrication of p-Zn_xCu_1-xI/n-MgSnN₂ heterojunction

  • Shunichiro Yata (Chubu University / JP)

   Characterization, Novel Materials and Nanostructures