Back
  • Abstract Talk
  • AT 131

MOCVD growth and simulation of AlScN high-electron-mobility-transistor-structures

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon London

Session

2D and III-Nitride materials

Topics

  • Characterization
  • Novel Materials and Nanostructures

Authors

Isabel Streicher (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Dr. Stefano Leone (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Dr. Christian Manz (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Dr. Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Mario Prescher (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Hanspeter Menner (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Dr. Patrick Waltereit (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Dr. Michael Mikulla (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Prof. Dr. Ruediger Quay (Fraunhofer Institute for Applied Solid State Physics IAF / DE), Prof. Dr. Dr. Oliver Ambacher (Fraunhofer Institute for Applied Solid State Physics IAF / DE)

    • v1.20.0
    • © Conventus Congressmanagement & Marketing GmbH
    • Imprint
    • Privacy