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  • Abstract Talk
  • AT 132

A substitutional synthesis mechanism for attaining InGaN/GaN quantum wells with sub-nm thickness and high indium content

Termin

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Salon London

Session

2D and III-Nitride materials

Themen

  • Characterization
  • Novel Materials and Nanostructures

Mitwirkende

Isaak Vasileiadis (Aristotle University of Thessaloniki / GR), Prof. Dr. Liverios Lymperakis (Max-Planck Institut für Eisenforschung GmbH / DE), Dr. Adam Adikimenakis (University of Crete / GR), Athanasios Gkotinakos (Aristotle University of Thessaloniki / GR), Dr. Vivek Devulapalli (Max-Planck Institut für Eisenforschung GmbH / DE), Dr. Christian Liebscher (Max-Planck Institut für Eisenforschung GmbH / DE), Dr. Maria Androulidaki (University of Crete / GR), Dr. René Hübner (Helmholtz-Zentrum Dresden-Rossendorf / DE), Professor Theodoros Karakostas (Aristotle University of Thessaloniki / GR), Professor Alexandros Georgakilas (FORTH / GR), Professor Philomela Komninou (Aristotle University of Thessaloniki / GR), Dr. Emmanouil Dimakis (Helmholtz-Zentrum Dresden-Rossendorf / DE), Professor George Dimitrakopulos (Aristotle University of Thessaloniki / GR)

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