Session – Characterization
Deep levels, Defect, NRCs-1

Programm

• 10:30 – 11:00 25 Min. 5 Min.

  • Invited Talk
  • IT 33

  Deep traps in InGaN/GaN single quantum well structures

  • Dr. Raphaël Butté (EPFL / CH)
• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 248

  Defect-assisted nonradiative recombination via trap-assisted Auger

  • Professor Chris G. Van de Walle (University of California Santa Barbara / US)

   Characterization, Optical devices
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 128

  Impact of carrier localization on point-defect-assisted non-radiative recombination in InGaN alloys

  • Nick Pant (University of Michigan / US)

   Characterization, Optical devices
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 129

  Nature of nonradiative recombination at threading dislocations in GaN

  • Dr. Jonas Lähnemann (Paul Drude Institute for Solid State Electronics / DE)

   Characterization, Optical devices
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 130

  Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy

  • Ronny Kirste (NCSU / US)

   Characterization