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Dr. Jonas Lähnemann

Paul Drude Institute for Solid State Electronics / DE

Paul Drude Institute for Solid State Electronics

Vorsitz

10.10.2022
15:45 – 17:15
Session
Optical Characterization 2
Room Berlin

Vortrag

10.10.2022
Poster Presentation
PP 013
Revisiting carrier diffusion in GaN – ambipolar versus exciton diﬀusion
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 113
Temperature-dependence of the generation volume – prerequisite for quantitative analysis of electron-beam-induced signals
Characterization, Optical devices
12.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 129
Nature of nonradiative recombination at threading dislocations in GaN
Characterization, Optical devices

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 013
Revisiting carrier diffusion in GaN – ambipolar versus exciton diﬀusion
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 113
Temperature-dependence of the generation volume – prerequisite for quantitative analysis of electron-beam-induced signals
Characterization, Optical devices
12.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 129
Nature of nonradiative recombination at threading dislocations in GaN
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 354
Study on the thermal stability of sputtered metallic TiN thin films used for self-assembly of AlN nanowires at 1200 °C
Characterization, Growth
12.10.2022
Poster Presentation
PP 384
Optical properties of AlScN epitaxial films grown by molecular beam epitaxy
Characterization, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 347
Applying line-of-sight quadrupole mass spectrometry to monitor in situ changes in In incorporation during epitaxy of thick (In,Ga)N films
Characterization, Growth