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Dr. Jonas Lähnemann

Paul Drude Institute for Solid State Electronics / DE

Paul Drude Institute for Solid State Electronics

Chair

10/10/2022
15:45 – 17:15
Session
Optical Characterization 2
Room Berlin

Speaker

10/10/2022
Poster Presentation
PP 013
Revisiting carrier diffusion in GaN – ambipolar versus exciton diﬀusion
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 113
Temperature-dependence of the generation volume – prerequisite for quantitative analysis of electron-beam-induced signals
Characterization, Optical devices
12/10/2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 129
Nature of nonradiative recombination at threading dislocations in GaN
Characterization, Optical devices

Further involvements

10/10/2022
Poster Presentation
PP 013
Revisiting carrier diffusion in GaN – ambipolar versus exciton diﬀusion
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 113
Temperature-dependence of the generation volume – prerequisite for quantitative analysis of electron-beam-induced signals
Characterization, Optical devices
12/10/2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 129
Nature of nonradiative recombination at threading dislocations in GaN
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 354
Study on the thermal stability of sputtered metallic TiN thin films used for self-assembly of AlN nanowires at 1200 °C
Characterization, Growth
12/10/2022
Poster Presentation
PP 384
Optical properties of AlScN epitaxial films grown by molecular beam epitaxy
Characterization, Novel Materials and Nanostructures
12/10/2022
Poster Presentation
PP 347
Applying line-of-sight quadrupole mass spectrometry to monitor in situ changes in In incorporation during epitaxy of thick (In,Ga)N films
Characterization, Growth