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IWN 2022
Programm
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Session
Session – Growth
Doping Applications
Termin
Datum:
12.10.2022
Zeit:
16:15
–
17:45
Ort / Stream:
Salon Moskau
Chair
Dr. Armin Dadgar
Otto-von-Guericke-University Magdeburg / DE
Programm
16:15
–
16:45
25 Min.
5 Min.
Invited Talk
IT 45
Mg implantation for selective area p-type doping and its device applications
Professor Spyridon Pavlidis (North Carolina State University / US)
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 189
Compensation control of n-type GaN using intrinsic carbon from TMGaprecursor in MOVPE growth for vertical GaN power devices
Dr. Piotr Kruszewski (Polish Academy of Sciences / PL)
Dr. Paweł Prystawko (Polish Academy of Science / PL)
Electronic devices, Growth
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 190
Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs
Prof. Dr. Narihito Okada (Yamaguchi University / JP)
Electronic devices, Growth
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 191
Mg doping in In-rich InAlN layers
Ondrej Pohorelec (Slovak Academy Of Sciences / SK)
Characterization, Growth
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 192
Recent progress in HVPE growth of doped GaN single crystals and resulting wafers
Dr. Sven Jachalke (Freiberger Compound Materials GmbH / DE)
Characterization, Growth
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