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IWN 2022
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Poster Session
Poster Session 4
Growth
Termin
Datum:
12.10.2022
Zeit:
12:00
–
14:00
Ort / Stream:
Topic Growth
Programm
Poster Presentation
PP 349
Enhancing dislocation annihilation in high-temperature-annealed AlN templates by ion implantation
Christoph Margenfeld (Technische Universität Braunschweig / DE)
Characterization, Growth
Poster Presentation
PP 350
Highly crystalline AlN by physical vapor deposition with NH3 sputtering gas as potential seed layer for power electronic device applications
Dr. Jana Ligl (Evatec AG / CH)
Characterization, Growth
Poster Presentation
PP 351
Use of thin Al2O3 layers for growth of high quality ultrawide bandgap materials on Si
Dr. Jonathan Anderson (Texas State University / US)
Characterization, Growth
Poster Presentation
PP 352
Study of HVPE-GaN doped with silicon
Dr. Małgorzata Iwinska (Polish Academy of Science / PL)
Characterization, Growth
Poster Presentation
PP 353
MOVPE growth of GaInN QWs and green LEDs on GaN (0001) substrates
Motoki Nakano (Meijo University / JP)
Growth, Optical devices
Poster Presentation
PP 354
Study on the thermal stability of sputtered metallic TiN thin films used for self-assembly of AlN nanowires at 1200 °C
Dr. Philipp John (PDI-Berlin / DE)
Characterization, Growth
Poster Presentation
PP 355
Suppressing p-type parasitic channel generation at the interface of an aluminum nitride nucleation layer and a high resistivity silicon substrate
Dr. Po-Jung Lin (GlobalWafers / TW)
Characterization, Growth
Poster Presentation
PP 356
On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
Professor Ramón Collazo (North Carolina State University / US)
Characterization, Growth
Poster Presentation
PP 357
Growth of defect-free GaN layer by pattern free Epitaxial Lateral Overgrowth (ELOG) technique
Dr. Ritam Sarkar (Indian Institute of Technology Bombay / IN)
Electronic devices, Growth
Poster Presentation
PP 359
Improvement of crystallinity and flatness of N-polar AlN by polarity inversion from Al-polar AlN on vicinal sapphire substrate
Prof. Dr. Narihito Okada (Yamaguchi University / JP)
Electronic devices, Growth
Poster Presentation
PP 360
Generation of large-diameter aluminum nitride single crystal seeds
Dr. Shaoping Wang (Altech Semiconductors Corporation / US)
Characterization, Growth
Poster Presentation
PP 361
Semipolar {11-22} AlInN epitaxial layers grown on a fully relaxed semipolar GaInN/GaN/m-plane sapphire template by MOCVD
Makoto Miyoshi (Nagoya Institute of Technology / JP)
Characterization, Growth
Poster Presentation
PP 362
Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700℃
Takumi Miyagawa (Tokushima University / JP)
Growth
Poster Presentation
PP 363
MOVPE growth and characterization of thin layer h-BN on graphene
Vishnu Ottapilakkal (CNRS IRL 2598 - Georgia Tech Lorraine / FR)
Characterization, Growth
Poster Presentation
PP 364
Ultra-violet photodetector on epitaxial non-polar GaN nanostructure grown on sapphire (1-100) by laser MBE technique
Vishnu Aggarwal (CSIR-National Physical Laboratory, New Delhi / IN)
Characterization, Growth
Poster Presentation
PP 365
Improved nucleation of 111 ScN thin films
Zachary Engel (Georgia Institute of Technology / US)
Characterization, Growth
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