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IWN 2022
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Christoph Margenfeld
Technische Universität Braunschweig / DE
Technische Universität Braunschweig
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Datum
Vortrag
11.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 056
Growth and high-temperature annealing of
a
-Plane AlN templates
Growth, Optical devices
12.10.2022
Poster Presentation
PP 349
Enhancing dislocation annihilation in high-temperature-annealed AlN templates by ion implantation
Characterization, Growth
Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 099
Organic-inorganic PEDOT/nitride heterojunctions for 3D micro-LEDs
Novel Materials and Nanostructures, Optical devices
10.10.2022
Poster Presentation
PP 043
Evaluation and modelling of high-temperature annealed AlN as material platform for vertical electronics
Electronic devices, Novel Materials and Nanostructures
11.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 056
Growth and high-temperature annealing of
a
-Plane AlN templates
Growth, Optical devices
11.10.2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 060
Time-resolved cathodoluminescence of AlGaN microfins as nonpolar UV-emitters
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 192
Towards highly integrated single photon avalanche detectors based on InGaN
Characterization, Optical devices
11.10.2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 079
A combination of ion implantation and high temperature annealing – the origin of the 265 nm absorption in AlN
Characterization, Growth
12.10.2022
Poster Presentation
PP 349
Enhancing dislocation annihilation in high-temperature-annealed AlN templates by ion implantation
Characterization, Growth
12.10.2022
Poster Presentation
PP 318
Investigation of self-compensation effects in ultra-highly Si- and Ge-doped n-GaN
Characterization, Growth
13.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 204
Optimizing thickness and composition gradient in core-shell InGaN/GaN structures
Growth, Optical devices
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