Opening Ceremony
08:30 – 09:30
Deep UV laser diode as an example of overcoming the semiconducting limit
09:30 – 10:15
Lattice constant engineering for long wavelength nitride emitters
10:45 – 11:30
Applicability of recent advances in material research performed in UltimateGaN
11:30 – 12:15
Optical Characterization 1
13:45 – 15:00
Optical Characterization 2
15:45 – 17:15
Honorary Chairs
19:30 – 20:30
Growth of h-BN
13:45 – 15:15
Nanowires
CMOS, high temperature, data transmission
Vertical devices I
Energy efficiency: Physics and society
VCSEL
Women in Nitrides
19:30 – 21:30
AlGaN Relaxation and Applications
AlN Growth
Poster Session 1
17:30 – 19:30
10. Oktober 2022