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IWN 2022
Programm
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Session
Session – Novel Materials & Nanostructures
Nanowires
Termin
Datum:
10.10.2022
Zeit:
15:45
–
17:15
Ort / Stream:
Salon London
Chair
Prof. Dr. Andreas Waag
Technische Universität Braunschweig / DE
Programm
15:45
–
16:00
12 Min.
3 Min.
Abstract Talk
AT 023
Etching of the lateral SiGaN passivation layer for full facet coverage in InGaN/GaN core-shell nanowires by MOVPE
Julien Bosch (CNRS-CRHEA / FR)
Growth, Novel Materials and Nanostructures
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 024
Intrinsic heterogeneous distribution of electrical dopants in GaN nanowires
Dr. Bruno Daudin (CEA Grenoble / FR)
Characterization, Novel Materials and Nanostructures
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 025
Shallow donors and DX states in AlN nanowires
Rémy Vermeersch (CEA / CNRS / FR)
Growth, Novel Materials and Nanostructures
16:30
–
16:45
12 Min.
3 Min.
Abstract Talk
AT 026
Nanoscale dopant profiling of individual semiconductor wires by capacitance-voltage measurements
Dr. Timothée Lassiaz (Aledia / FR)
Characterization, Novel Materials and Nanostructures
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 027
A route for the top-down fabrication of ordered GaN nanowires with ultrathin diameters
Dr. Thomas Auzelle (Paul-Drude-Institut / DE)
Electronic devices, Novel Materials and Nanostructures
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 028
Well-ordered (In,Ga)N nanowires grown by SAG HVPE
Elias Semlali (Institut Pascal / FR)
Growth, Novel Materials and Nanostructures
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