.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Dr. Thomas Auzelle

Paul-Drude-Institut / DE

Paul-Drude-Institut

Vortrag

10.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 027
A route for the top-down fabrication of ordered GaN nanowires with ultrathin diameters
Electronic devices, Novel Materials and Nanostructures

Weitere Beteiligungen

10.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 027
A route for the top-down fabrication of ordered GaN nanowires with ultrathin diameters
Electronic devices, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 354
Study on the thermal stability of sputtered metallic TiN thin films used for self-assembly of AlN nanowires at 1200 °C
Characterization, Growth
12.10.2022
Poster Presentation
PP 377
Impact of strain relaxation and surface recombination on the photoluminescence of ordered arrays of thin, top-down fabricated GaN/(In,Ga)N nanowires
Characterization, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 347
Applying line-of-sight quadrupole mass spectrometry to monitor in situ changes in In incorporation during epitaxy of thick (In,Ga)N films
Characterization, Growth