Session – Novel Materials & Nanostructures
Nanowires

Programme

• 15:45 – 16:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 023

  Etching of the lateral SiGaN passivation layer for full facet coverage in InGaN/GaN core-shell nanowires by MOVPE

  • Julien Bosch (CNRS-CRHEA / FR)

   Growth, Novel Materials and Nanostructures
• 16:00 – 16:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 024

  Intrinsic heterogeneous distribution of electrical dopants in GaN nanowires

  • Dr. Bruno Daudin (CEA Grenoble / FR)

   Characterization, Novel Materials and Nanostructures
• 16:15 – 16:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 025

  Shallow donors and DX states in AlN nanowires

  • Rémy Vermeersch (CEA / CNRS / FR)

   Growth, Novel Materials and Nanostructures
• 16:30 – 16:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 026

  Nanoscale dopant profiling of individual semiconductor wires by capacitance-voltage measurements

  • Dr. Timothée Lassiaz (Aledia / FR)

   Characterization, Novel Materials and Nanostructures
• 16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 027

  A route for the top-down fabrication of ordered GaN nanowires with ultrathin diameters

  • Dr. Thomas Auzelle (Paul-Drude-Institut / DE)

   Electronic devices, Novel Materials and Nanostructures
• 17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 028

  Well-ordered (In,Ga)N nanowires grown by SAG HVPE

  • Elias Semlali (Institut Pascal / FR)

   Growth, Novel Materials and Nanostructures