Session – Characterization
Optical Characterization 1

Programm

• 13:45 – 14:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 004

  Correlative light-electron microscopy – non-destructive imaging of residual strains and their effect on optical and electrical properties of III-Nitrides

  • Prof. Dr. Robert Martin (Strathclyde University / GB)

   Characterization, Growth
• 14:00 – 14:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 001

  Femtosecond pump-probe absorption edge spectroscopy of cubic GaN

  • Elias Baron (Otto-von-Guericke-Universität Magdeburg / DE)

   Characterization
• 14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 002

  Origin of anisotropy in partially relaxed InGaN layers and the procedure for strain state analysis

  • Dr. Joanna Moneta (Polish Academy of Science / PL)

   Characterization, Growth
• 14:30 – 14:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 003

  Visualization of excited-electron relaxation in InGaN quantum wells using time-resolved two-photon photoemission spectroscopy

  • Dr. Shuhei Ichikawa (Osaka University / JP)

   Characterization, Optical devices
• 14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 127

  Low-temperature internal quantum efficiency in III-nitride quantum wells

  • Prof. Dr. Andreas Hangleiter (Technische Universität Braunschweig / DE)

   Characterization, Optical devices