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Dr. Gwénolé Jacopin

Institut Néel - CNRS / FR

Institut Néel - CNRS

Vorsitz

10.10.2022
13:45 – 15:00
Session
Optical Characterization 1
Room Berlin

Invited Speaker

13.10.2022
11:00 – 11:30 25 Min. 5 Min.
Invited Talk
IT 55
Surface recombinations in III-nitride micro-LEDs: What photon correlation cathodoluminescence tells us

Weitere Beteiligungen

10.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 014
Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density
Growth, Optical devices
10.10.2022
16:15 – 16:30 12 Min. 3 Min.
Abstract Talk
AT 025
Shallow donors and DX states in AlN nanowires
Growth, Novel Materials and Nanostructures
10.10.2022
16:30 – 16:45 12 Min. 3 Min.
Abstract Talk
AT 026
Nanoscale dopant profiling of individual semiconductor wires by capacitance-voltage measurements
Characterization, Novel Materials and Nanostructures
10.10.2022
Poster Presentation
PP 073
Control and quantification of point defects in InGaN/GaN nanowires
Characterization, Novel Materials and Nanostructures
10.10.2022
Poster Presentation
PP 084
A 285 nm AlN nanowire-based light emitting diode
Novel Materials and Nanostructures, Optical devices
11.10.2022
16:00 – 16:15 12 Min. 3 Min.
Abstract Talk
AT 083
Core-shell InGaN quantum wells – achievement of defect-free growth and dual color emission
Growth, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 369
Europium-implanted AlN p-n junction nanowires – towards the realization of red light-emitting devices
Characterization, Novel Materials and Nanostructures
12.10.2022
14:15 – 14:30 12 Min. 3 Min.
Abstract Talk
AT 147
Optimization of ALE process for GaN with the substitution of Ar by Kr
Characterization, Optical devices
13.10.2022
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 223
Core-shell GaN/Al(Ga)N heterostructures – from quantum wells for UV-A to monolayers for UV-C
Growth, Optical devices