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Prof. Dr. Andreas Hangleiter

Technische Universität Braunschweig / DE

Technische Universität Braunschweig

Vorsitz

13.10.2022
10:30 – 12:15
Session
InGaN LEDs
Room Berlin

Vortrag

10.10.2022
14:45 – 15:00 12 Min. 3 Min.
Abstract Talk
AT 127
Low-temperature internal quantum efficiency in III-nitride quantum wells
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 371
Pyramid formation by wet etching of GaInN/GaN quantum well structures grown on N-face GaN for single photon emitting quantum dot structures
Growth, Novel Materials and Nanostructures

Weitere Beteiligungen

10.10.2022
14:45 – 15:00 12 Min. 3 Min.
Abstract Talk
AT 127
Low-temperature internal quantum efficiency in III-nitride quantum wells
Characterization, Optical devices
11.10.2022
Poster Presentation
PP 216
Detailed analysis of in-plane lattice constants and their correlation to luminescence efficiency of GaInN/GaN single quantum wells
Characterization, Growth
11.10.2022
Poster Presentation
PP 224
Excitation and carrier relaxation in GaInN/GaN quantum wells under strong optical pumping
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 371
Pyramid formation by wet etching of GaInN/GaN quantum well structures grown on N-face GaN for single photon emitting quantum dot structures
Growth, Novel Materials and Nanostructures