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IWN 2022
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DE
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Prof. Dr. Andreas Hangleiter
Technische Universität Braunschweig / DE
Technische Universität Braunschweig
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Date
Chair
13/10/2022
10:30
–
12:15
Session
InGaN LEDs
Room Berlin
Speaker
10/10/2022
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 127
Low-temperature internal quantum efficiency in III-nitride quantum wells
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 371
Pyramid formation by wet etching of GaInN/GaN quantum well structures grown on N-face GaN for single photon emitting quantum dot structures
Growth, Novel Materials and Nanostructures
Further involvements
10/10/2022
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 127
Low-temperature internal quantum efficiency in III-nitride quantum wells
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 216
Detailed analysis of in-plane lattice constants and their correlation to luminescence efficiency of GaInN/GaN single quantum wells
Characterization, Growth
11/10/2022
Poster Presentation
PP 224
Excitation and carrier relaxation in GaInN/GaN quantum wells under strong optical pumping
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 371
Pyramid formation by wet etching of GaInN/GaN quantum well structures grown on N-face GaN for single photon emitting quantum dot structures
Growth, Novel Materials and Nanostructures
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