Session – Characterization
InGaN LEDs

Programm

• 10:30 – 11:00 25 Min. 5 Min.

  • Invited Talk
  • IT 54

  Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

  • Professor Daniel Feezell (University of New Mexico / US)
• 11:00 – 11:30 25 Min. 5 Min.

  • Invited Talk
  • IT 55

  Surface recombinations in III-nitride micro-LEDs: What photon correlation cathodoluminescence tells us

  • Dr. Gwénolé Jacopin (Institut Néel - CNRS / FR)
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 207

  Probing individual nonradiative point defects in InGaN/GaN quantum wells using time-resolved cathodoluminescence

  • Thomas Weatherley (Ecole Polytechnique Fédérale de Lausanne (EPFL) / CH)

   Characterization, Growth
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 208

  Local emission and structure of µLED arrays with XEOL and µLaue

  • Dr. Joël Eymery (CEA / FR)

   Optical devices, Characterization
• 12:00 – 12:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 209

  InGaN/GaN nanowire light emitting diodes with an inverted doping order

  • Dr. Maria Tchernycheva (C2N-CNRS, Univ. Paris Saclay / FR)

   Optical devices, Characterization