Session – Novel Materials & Nanostructures
Growth of h-BN

Programm

• 13:45 – 14:15 25 Min. 5 Min.

  • Invited Talk
  • IT 02

  Growth of hexagonal boron nitrides on non-catalytic substrates by MOCVD

  • Professor Jong Kyu Kim (Pohang University of Science and Technology / KR)
• 14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 005

  Direct conformal growth of hexagonal boron nitride on the silicon-based substrate by MOCVD for silicon electronics

  • Jiye Kim (POSTECH / KR)

   Novel Materials and Nanostructures, Growth
• 14:30 – 14:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 006

  Controlled epitaxial growth of atomically thin h-BN on graphene using defect engineering

  • Dr. Neha Aggarwal (Paul-Drude Institut für Festkörperelektronik / DE)

   Novel Materials and Nanostructures, Growth
• 14:45 – 15:15 25 Min. 5 Min.

  • Invited Talk
  • IT 03

  First observation of bernal boron nitride crystals

  • Dr. Adrien Rousseau (Laboratoire Charles Coulomb / FR)