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IWN 2022
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Session
Session – Novel Materials & Nanostructures
Growth of h-BN
Appointment
Date:
10/10/2022
Time:
13:45
–
15:15
Location / Stream:
Salon London
Chair
Professor Abdallah Ougazzaden
Georgia Institute of Technology / FR
Programme
13:45
–
14:15
25 Min.
5 Min.
Invited Talk
IT 02
Growth of hexagonal boron nitrides on non-catalytic substrates by MOCVD
Professor Jong Kyu Kim (Pohang University of Science and Technology / KR)
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 005
Direct conformal growth of hexagonal boron nitride on the silicon-based substrate by MOCVD for silicon electronics
Jiye Kim (POSTECH / KR)
Growth, Novel Materials and Nanostructures
14:30
–
14:45
12 Min.
3 Min.
Abstract Talk
AT 006
Controlled epitaxial growth of atomically thin h-BN on graphene using defect engineering
Dr. Neha Aggarwal (Paul-Drude Institut für Festkörperelektronik / DE)
Growth, Novel Materials and Nanostructures
14:45
–
15:15
25 Min.
5 Min.
Invited Talk
IT 03
First observation of bernal boron nitride crystals
Dr. Adrien Rousseau (Laboratoire Charles Coulomb / FR)
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