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Professor Abdallah Ougazzaden

Georgia Institute of Technology / FR

Georgia Institute of Technology

Vorsitz

10.10.2022
13:45 – 15:15
Session
Growth of h-BN
Salon London

Invited Speaker

11.10.2022
09:30 – 10:00 25 Min. 5 Min.
Invited Talk
IT 13
Van der Waals epitaxy of III-Nitrides on hexagonal boron nitride: from material properties to device applications

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 244
Towards flexible GaN MEMS using van der Waals epitaxy combined with mechanical lift-off and transfer to flexible substrates
Electronic devices, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 335
High sensitivity hexagonal boron nitride thermal neutron detectors
Electronic devices, Growth
13.10.2022
11:30 – 12:00 25 Min. 5 Min.
Invited Talk
IT 68
Selective area growth of III-Nitrides on h-BN platform
Growth, Novel Materials and Nanostructures
14.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 233
Toward n-doping of hexagonal boron nitride using sub band gap illumination
Characterization, Electronic devices