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IWN 2022
Programm
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Session
Session – Optical Devices
Energy efficiency: Physics and society
Termin
Datum:
10.10.2022
Zeit:
13:45
–
15:15
Ort / Stream:
Salon Vienna
Chair
Professor Shigefusa F. Chichibu
Tohoku University / JP
Programm
13:45
–
14:15
25 Min.
5 Min.
Invited Talk
IT 05
Luminescence in InGaN LEDs – recent insights on diffusion and localization
Dr. Aurélien David (Fremont, CA / US)
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 011
Vertical charge transport in (In,Ga)N quantum well systems – connecting atomistic electronic structure theory with macroscale drift-diffusion
Michael O'Donovan (Tyndall National Institute / IE)
Optical devices, Novel Materials and Nanostructures
14:30
–
14:45
12 Min.
3 Min.
Abstract Talk
AT 012
Atomistic study of radiative and Auger recombination rates in
c
-plane InGaN/GaN quantum wells
Joshua McMahon (Tyndall National Institute / IE)
Optical devices, Novel Materials and Nanostructures
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 013
III-N LEDs, rebound effects and energy savings
Dr. Bruno Gayral (CEA-Grenoble / FR)
Optical devices, Characterization
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 014
Impact of point defects on the efficiency of InGaN/GaN quantum wells grown on GaN-on-Si epilayers with high dislocation density
Pierre Lottigier (EPFL / CH)
Optical devices, Growth
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